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Aluminum Nitride Products

           
The Aluminium Nitride product is a new material having such characteristics as superior thermal conductivity, high electric insulation, and coefficient of thermal expansion similar to that of silicon (Si) and is drawing attention as a next-generation material with high thermal conductivity.
           
• High thermal conductivity about 7 times that of Alumina
• Having coefficient of thermal expansion similar to that of silicon, it realizes a high
reliability against installation of a large Si chip and heat cycle
• High electric insulation, and low dielectric constant
• Mechanical strength higher than that of Alumina
• Superior corrosion resistance against molten metal
• Very small content of impurities, no toxicity, high purity.
           
           

Physical properties (principal values)

     
           
Characteristic value

Unit

Sheet formed product Press molded product  
Density
g/cm3
33 3.3  
Thermal conductivty

W/m•k (R.T.)

170 160  
Coefficient of thermal expansion x10-6/șC (R.T.~400șC) 4.6 4.6  
Dielectric strength KV/mm (R.T.) 15 15  
Volume resistivity Ω•cm (R. T.) 1014 1014  
Dielectric constant 1MHz (R.T.) 9.0 9.0  
Bending strength MPa (R.T.) 450 300  
           
           

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Marketech Intl, Inc.

 

192 Otto Street

 

Port Townsend, WA 98368

 
Tel: 360-379-6707  
Toll Free: 877-452-4910  
   
           
Board, general tolerance

Thermal Conductivity

           
Item Sheet formed product Press molded product

Aluminum Nitride Thermal Conductivity

Dimension Max. 5"x7" Max. 2"x2"
Thickness 0.5~1.5
(as fired)
0.3~1.0
(lapped)
1~8 mm
Dimensional tolerance ±1%NLT
±0.1 mm
±1%NLT
±0.1 mm
Thickness tolerance * ±10% ±10%

Coefficient of thermal expansion

Warp tolerance ** ≤0.003mm/mm ≤0.003mm/mm

Aluminum Nitride Coefficient of thermal expansion

*Thickness tolerance of both-side polished product : ±0.05 mm
** Warp of both-sided polished product: ±0.0015 mm/mm
     
     
     
           
Physical properties (principal values)
Characteristic value Unit Sheet formed product Press molded product    
Density g/cm3 3.3 3.3    
Thermal conductivity W/m•k (R.T.) 170 160    
Coefficient of thermal expansion x10-6/șC (R.T.~400șC) 4.6 4.6    
Dielectric strength
KV/mm (R.T.)
15 15    
Volume resistivity Ω•cm (R. T.) 1014 1014    
Dielectric constant 1MHz (R.T.) 9.0 9.0    
Bending strength MPa (R.T.) 450 300    
           
           
Application      
           
• Power transistor module board    
• High-frequency device board    
• Radiating/insulating plate for thyristor    
• Mount board for semiconductor laser and light emission diode    
• Hybrid module, ignition module    
• IC package    
• Thermo-module board    
• Parts of semiconductor manufacturing equipment    
           
Power Module      
           

Aluminum Nitride Power Module

     
           
           
 
Please select "Fabrication Group" for more information on our custom capabilities. Can't find the material you are looking for on our site? Please select "Product Sourcing".